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NEC's NPN SILICON TRANSISTOR NE685M13
FEATURES
* NEW MINIATURE M13 PACKAGE: - Small transistor outline - 1.0 X 0.5 X 0.5 mm - Low profile / 0.50 mm package height - Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M13
0.15+0.1 n0.05
0.70.05 0.5+0.1 n0.05
0.2+0.1 n0.05
(Bottom View)
0.3
* *
0.35
1.0+0.1 n0.05
0.7
LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz
2
3
Y2
0.35
1
DESCRIPTION
NEC's NE685M13 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. The NE685 is also available in six different low cost plastic surface mount package styles.
0.15+0.1 n0.05
0.1
0.1
0.2
0.2
0.125+0.1 n0.05
0.50.05
PIN CONNECTIONS
1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE2 ICBO IEBO CRE3 PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz, ZS = ZOPT Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz Forward Current Gain at VCE = 3 V, IC = 10 mA Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz A A pF 0.4 UNITS GHz dB dB 7.0 75 MIN NE685M13 2SC5617 M13 TYP 12.0 1.5 11.0 140 0.1 0.1 0.7 2.5 MAX
Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
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NE685M13 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS VCBO VCEO VEBO IC PT2 TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 9.0 6.0 2.0 30 140 150 -65 to +150
ORDERING INFORMATION
PART NUMBER NE685M13-T3-A QUANTITY 3k pcs./reel
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With device mounted on 1.08 cm2 X 1.2 mm thick glass epoxy PCB.
TYPICAL PERFORMANCE CURVES (TA = 25C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.6 f = 1 MHz
Total Power Dissipation, Ptot (mW)
Mounted on Glass Epoxy PCB 2 (1.08 cm X 1.0 mm (t) )
250 200 150 100 50
Reverse Transfer Capacitance, Cre (pF)
300
0.5 0.4 0.3 0.2 0.1
140
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
Ambient Temperature, TA (C)
Collector to Base Voltage, VCB (V)
COLLECTOR CURRENT VS. BASE TO EMITTER VOLTAGE 30 VCE = 3 V 25 20 15 10 5
COLLECTOR CURRENT VS. COLLECTOR TO EMITTER VOLTAGE
40
Collector Current, IC (mA)
Collector Current, IC (mA)
30
20
300 A 270 A 240 A 210 A 180 A 150 A 120 A 90 A 60 A 2 4 IB = 30 A 6 8
10
0
0.2
0.4
0.6
0.8
1.0
0
Base to Emitter Voltage, TBE (V)
Collector to Emitter Voltage, VCE (V)
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NE685M13 TYPICAL PERFORMANCE CURVES (TA = 25C)
DC CURRENT GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
1 000
VCE = 3 V
16
Gain Bandwidth Product, fT (GHz)
14 12 10 8 6 4 2
VCE = 3 V f = 2 GHz
DC Current Gain, hFE
100
10 0.1
1
10
100
0 1
10
Collector Current, IC (mA)
100
Collector Current, IC (mA)
INSERTION POWER GAIN VS. FREQUENCY
35
INSERTION POWER GAIN VS. FREQUENCY
35
Insertion Power Gain |S21e|2, (dB)
30 25 20 15 10 5 0 0.1 1
Insertion Power Gain |S21e|2, (dB)
VCE = 1 V IC = 10 mA
30 25 20 15 10 5 0 0.1 1
VCE = 3 V IC = 10 mA
10
10
Frequency, f (GHz)
Frequency, f (GHz)
INSERTION POWER GAIN, MAG, MSG VS. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG VS. COLLECTOR CURRENT
20
Insertion Power Gain, IS21eI2 Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB)
Insertion Power Gain, IS21eI2 Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB)
VCE = 1 V f = 1 GHz
MSG
MAG
20
VCE = 3 V MSG f = 1 GHz
MAG
15 |S21e| 10
2
15
|S21e|2
10
5
5
0 1
10
Collector Current, IC (mA)
100
0 1
10
Collector Current, IC (mA)
100
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NE685M13 TYPICAL PERFORMANCE CURVES (TA = 25C)
INSERTION POWER GAIN, MAG, MSG VS. COLLECTOR CURRENT 20 INSERTION POWER GAIN, MAG, MSG VS. COLLECTOR CURRENT 20
Insertion Power Gain, IS21eI2 Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB)
Insertion Power Gain, IS21eI2 Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB)
VCE = 1 V f = 2 GHz
VCE = 3 V f = 2 GHz
15 MSG 10 |S21e|2 5 MAG
15 MSG 10 MAG
|S21e|2
5
0 1
10
Collector Current, IC (mA)
100
0 1
10
Collector Current, IC (mA)
100
Associated Gain, Ga (dB)
3
12
3
12
2
NF
8
2 NF 1 0 1
8
1 0 1
4 0 100
4 0 100
10
Collector Current, IC (mA)
10 Collector Current, IC (mA)
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Associated Gain, Ga (dB)
Noise Figure NF, (dB)
Noise Figure NF, (dB)
NOISE FIGURE, ASSOCIATED GAIN VS. COLLECTOR CURRENT 5 20 VCE = 1 V f = 1 GHz 16 4 Ga
NOISE FIGURE, ASSOCIATED GAIN VS. COLLECTOR CURRENT 5 20 VCE = 3 V Ga f = 1 GHz 4 16
NE685M13 TYPICAL PERFORMANCE CURVES (TA = 25C)
NOISE FIGURE, ASSOCIATED GAIN VS. COLLECTOR CURRENT 5 20 VCE = 1 V f = 2 GHz 16 4 NOISE FIGURE, ASSOCIATED GAIN VS. COLLECTOR CURRENT 5 20
VCE = 3 V f = 2 GHz
Associated Gain, Ga (dB)
3 Ga 2 NF 1 0 1
12
3
Ga
12
8
2
NF
8
4 0 100
1 0 1
4 0 100
10 Collector Current, IC (mA)
10
Collector Current, IC (mA)
3-159
Associated Gain, Ga (dB)
Noise Figure NF, (dB)
Noise Figure NF, (dB)
4
16
NE685M13 TYPICAL SCATTERING PARAMETERS (TA = 25C)
j50 j25 j100
+135 +45 +90
j10
S11
0
10
25
S11
50
100
+180
S21
2
4
6
8 10 12
+0
-j10
S22
-135 -45
-j25 -j50
-j100
-90
NE685M13 VC = 2 V, IC = 5 mA
FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 3.200 3.400 3.600 3.800 4.000 MAG 0.879 0.854 0.813 0.764 0.677 0.634 0.597 0.560 0.530 0.501 0.478 0.459 0.425 0.399 0.379 0.364 0.350 0.339 0.330 0.321 0.312 0.306 0.301 0.296 0.291 0.286 S11 ANG -11.18 -24.79 -36.17 -46.95 -58.07 -67.22 -75.01 -82.74 -89.38 -95.62 -101.10 -106.13 -114.91 -122.59 -129.37 -135.19 -140.57 -145.78 -150.79 -155.59 -160.44 -165.34 -170.19 -175.11 -179.68 176.05 MAG 10.895 10.531 9.980 9.356 8.645 7.952 7.355 6.818 6.315 5.872 5.483 5.137 4.543 4.068 3.678 3.369 3.103 2.882 2.695 2.529 2.386 2.263 2.150 2.048 1.957 1.874 S21 ANG 169.79 159.27 150.16 142.00 133.16 127.18 122.04 117.17 113.03 109.14 105.72 102.65 97.14 92.39 88.20 84.36 80.91 77.59 74.45 71.46 68.56 65.81 63.12 60.52 58.06 55.66 MAG 0.017 0.033 0.047 0.059 0.069 0.077 0.083 0.089 0.095 0.099 0.104 0.108 0.116 0.123 0.131 0.138 0.146 0.154 0.162 0.170 0.178 0.186 0.194 0.202 0.210 0.218 S12 ANG 85.46 76.47 70.32 65.55 59.99 57.31 55.43 53.53 52.58 51.55 50.81 50.49 50.07 50.09 50.25 50.70 51.06 51.17 51.40 51.61 51.67 51.55 51.53 51.43 51.16 51.06 MAG 0.980 0.943 0.894 0.843 0.756 0.701 0.657 0.615 0.579 0.542 0.515 0.491 0.451 0.417 0.394 0.377 0.362 0.351 0.343 0.335 0.328 0.324 0.323 0.323 0.327 0.332 S22 ANG -8.26 -15.79 -22.51 -28.26 -32.30 -35.05 -38.07 -40.74 -42.38 -44.09 -45.60 -47.11 -49.16 -50.64 -52.06 -53.48 -55.00 -56.70 -58.44 -60.35 -62.49 -65.12 -67.74 -70.53 -73.25 -75.87 0.05 0.13 0.19 0.24 0.37 0.43 0.47 0.51 0.56 0.61 0.65 0.68 0.76 0.82 0.88 0.92 0.96 0.99 1.02 1.04 1.06 1.08 1.09 1.10 1.10 1.11 K MAG1 (dB) 27.96 25.05 23.25 21.98 21.00 20.16 19.46 18.82 18.24 17.73 17.22 16.79 15.94 15.18 14.49 13.87 13.27 12.73 11.43 10.49 9.75 9.16 8.63 8.14 7.72 7.33
Note: 1. Gain Calculations:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
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NE685M13 TYPICAL SCATTERING PARAMETERS (TA = 25C)
j50 j25 j100
+135 +45 +90
j10
S12 5 10 15 20 +0
S11 0 10 25 50 100
+180
S21
S22 -j10
-135 -45
-j25 -j50
-j100
-90
NE685M13 VC = 3 V, IC = 10 mA
FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.100 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 3.200 3.400 3.600 3.800 4.000 MAG 0.830 0.791 0.734 0.675 0.584 0.541 0.506 0.473 0.448 0.423 0.405 0.390 0.364 0.344 0.329 0.318 0.308 0.300 0.294 0.287 0.282 0.277 0.273 0.270 0.266 0.263 S11 ANG -14.89 -30.25 -43.35 -55.24 -67.02 -76.48 -84.40 -92.17 -98.62 -104.84 -110.11 -114.95 -123.47 -130.71 -137.11 -142.56 -147.52 -152.37 -157.24 -161.72 -166.38 -170.99 -175.85 179.25 174.83 170.53 MAG 15.406 14.529 13.385 12.178 10.911 9.839 8.943 8.163 7.477 6.891 6.385 5.947 5.216 4.640 4.179 3.809 3.499 3.242 3.024 2.834 2.670 2.526 2.397 2.282 2.179 2.084 S21 ANG 167.04 155.17 144.88 136.08 127.43 121.58 116.65 112.19 108.45 104.94 101.90 99.15 94.22 90.04 86.28 82.88 79.73 76.73 73.87 71.13 68.47 65.91 63.40 60.99 58.67 56.42 MAG 0.015 0.029 0.041 0.050 0.058 0.064 0.069 0.075 0.079 0.083 0.088 0.092 0.100 0.109 0.117 0.126 0.135 0.144 0.153 0.162 0.171 0.180 0.189 0.197 0.207 0.215 S12 ANG 79.15 74.31 68.95 64.19 59.86 57.87 56.90 55.96 55.53 55.34 55.24 55.23 55.77 56.13 56.73 57.15 57.35 57.60 57.62 57.53 57.39 57.27 56.83 56.62 56.19 55.67 MAG 0.969 0.918 0.852 0.786 0.690 0.631 0.586 0.546 0.513 0.478 0.455 0.435 0.401 0.373 0.355 0.341 0.330 0.322 0.316 0.310 0.304 0.302 0.301 0.302 0.306 0.311 S22 ANG -9.82 -18.40 -25.66 -31.42 -34.94 -37.08 -39.46 -41.46 -42.47 -43.52 -44.52 -45.57 -46.75 -47.51 -48.39 -49.39 -50.56 -51.97 -53.62 -55.48 -57.60 -60.04 -62.78 -65.63 -68.43 -71.13 0.15 0.18 0.25 0.32 0.46 0.52 0.57 0.62 0.66 0.71 0.75 0.78 0.85 0.90 0.94 0.97 1.00 1.02 1.03 1.05 1.06 1.07 1.07 1.08 1.08 1.08 K MAG1 (dB) 30.06 26.96 25.11 23.86 22.75 21.86 21.10 20.39 19.74 19.17 18.61 18.09 17.16 16.29 15.52 14.81 14.15 12.70 11.86 11.10 10.45 9.89 9.38 8.91 8.51 8.11
Note: 1. Gain Calculations:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
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NE685M13 NE685M13 NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS (1)
Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 7e-16 109 1 15 0.19 7.9e-13 2.19 1 1.08 12.4 0 0 2 1.3 10 8.34 0.009 10 0.4e-12 0.812 0.5 0.18e-12 0.75 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1
SCHEMATIC
Q1
CCBPKG CCB LCX LBX Base LB CCE Collector
0.34 0.7 0 0.75 0 0.5 2.5e-12 5.2 4.58 0.011 0 1e-9 1.11 0 3 0 1
LE
CCEPKG
LEX
Emitter
ADDITIONAL PARAMETERS
Parameters CCB CCE LB LE CCBPKG CCEPKG LBX LCX LEX 68533 0.1e-12 0.14e-12 0.35e-9 0.4e-9 0.05e-12 0.05e-12 0.05e-9 0.05e-9 0.05e-9
(1) Gummel-Poon Model
UNITS
Parameter time capacitance inductance resistance voltage current Units seconds (S) farads (F) henries (H) ohms () volts (V) amps (A) MODEL RANGE Frequency: 0.1 to 4.0 GHz Bias: VCE = 0.5 V to 3 V, IC = 0.5 mA to 20 mA Date: 09/02
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 DATA SUBJECT TO CHANGE WITHOUT NOTICE Internet: http://WWW.CEL.COM 03/18/2002
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4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279
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CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information.
Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
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